cystech electronics corp. spec. no. : c223s6-a issued date : 2007.07.18 revised date :2011.02.22 page no. : 1/6 HBN2515S6R cystek product specification low vcesat npn epitaxial planar transistor HBN2515S6R (dual transistors) features ? two btd2515 chips in a sot-363 package. ? mounting possible with sot-323 automatic mounting machines. ? transistor elements are indepe ndent, eliminating interference. ? mounting cost and area can be cut in half. ? low v ce (sat), v ce (sat)=25mv (max), at i c / i b = 10ma / 0.5ma. ? weight : 9.1mg, approximately. ? pb-free package. equivalent circuit outline HBN2515S6R tr2 tr1 sot-363 the following characteristics apply to both tr1 and tr2 absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 6 v collector current (dc) i c 800 ma collector current (pulse) i cp 1.5 (note 1) a power dissipation pd 200 (total) (note 2) mw junction temperature tj 150 c storage temperature tstg -55~+150 c note : 1.single pulse, pw=10ms 2.150mw per element mu st not be exceeded.
cystech electronics corp. spec. no. : c223s6-a issued date : 2007.07.18 revised date :2011.02.22 page no. : 2/6 HBN2515S6R cystek product specification characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 20 - - v i c =100 a, i e =0 bv ceo 15 - - v i c =2ma, i b =0 bv ebo 6 - - v i e =100 a, i c =0 i cbo - - 100 na v cb =15v, i e =0 i ebo - - 100 na v eb =6v, i c =0 *v ce(sat) 1 - - 25 mv i c =10ma, i b =0.5ma *v ce(sat) 2 - - 150 mv i c =200ma, i b =10ma *v ce(sat) 3 - - 250 mv i c =500ma, i b =50ma *r ce(sat) - - 500 m i c =500ma, i b =50ma *v be(sat) - - 1.1 v i c =500ma, i b =50ma *v be(on) - - 0.9 v v ce =2v, i c =100ma *h fe 1 160 - - - v ce =1v, i c =10ma *h fe 2 180 - 560 - v ce =1v, i c =100ma *h fe 3 150 - - - v ce =1v, i c =500ma f t 100 300 - mhz v ce =10v, i c =50ma, f=100mhz cob - 6.5 - pf v cb =10v, f=1mhz *pulse test : pulse width 380 s, duty cycle 2% ordering information device package shipping marking HBN2515S6R sot-363 (pb-free) 3000 pcs / tape & reel bs
cystech electronics corp. spec. no. : c223s6-a issued date : 2007.07.18 revised date :2011.02.22 page no. : 3/6 HBN2515S6R cystek product specification characteristic curves current gain vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) current gain---hfe vce=1v vce=2v saturation voltage vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vcesat@ic=10ib vcesat@ic= 20 ib saturation voltage vs collector current 100 1000 10000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic= 10 ib on voltage vs collector current 100 1000 1 10 100 1000 collector current---ic(ma) on voltage---(mv) vbeon@vce=2v power derating curve 0 50 100 150 200 250 0 50 100 150 200 ambient temeprature---ta() power dissipation---pd(mw) single dual
cystech electronics corp. spec. no. : c223s6-a issued date : 2007.07.18 revised date :2011.02.22 page no. : 4/6 HBN2515S6R cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c223s6-a issued date : 2007.07.18 revised date :2011.02.22 page no. : 5/6 HBN2515S6R cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c223s6-a issued date : 2007.07.18 revised date :2011.02.22 page no. : 6/6 HBN2515S6R cystek product specification sot-363 dimension marking: date code: year + month year : 6 2006, 7 2007,?, etc month : 1 jan feb, ?, 9 sep, a oct, b nov, c dec millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.900 1.100 0.035 0.043 e1 2.150 2.450 0.085 0.096 a1 0.000 0.100 0.000 0.004 e 0.650 typ 0.026 typ a2 0.900 1.000 0.035 0.039 e1 1.200 1.400 0.047 0.055 b 0.150 0.350 0.006 0.014 l 0.525 ref 0.021 ref c 0.080 0.150 0.003 0.006 l1 0.260 0.460 0.010 0.018 d 2.000 2.200 0.079 0.087 0 8 0 8 e 1.150 1.350 0.045 0.053 notes : 1 .controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . 6-lead sot-363r plastic surface mounted package cystek package code: s6r style: pin 1. emitter1 (e1) pin 2. base1 (b1) pin 3. collector2 (c2) pin 4. emitter2 (e2) pin 5. base2 (b2) ctor1 (c1) pin 6. colle device code b s 2
|
